Control method and plasma processing apparatus

ABSTRACT

A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. application Ser.No. 17/017,039, filed on Sep. 10, 2020, which is a continuation-in-partof International Application No. PCT/JP2019/023238, filed on Jun. 12,2019, which claims priority from Japanese Patent Application Nos.2018-119344 and 2019-105708, filed on Jun. 22, 2018 and Jun. 5, 2019,respectively, all of which are incorporated herein in their entiretiesby reference.

TECHNICAL FIELD

The present disclosure relates to a control method and a plasmaprocessing apparatus.

BACKGROUND

There is known a technology of making the etching rage of apolycrystalline silicon layer uniform, in which a radio-frequency powerfor drawing ions is applied in synchronization with ON/OFF of aradio-frequency power for generating plasma during an etching so as tocause the ions to reach a polycrystalline silicon layer (see, e.g.,Japanese Patent Laid-open Publication No. 10-064915).

Japanese Patent Laid-open Publication No. 10-064915 controls the etchingrate by applying radio-frequency powers of two different frequencieswhich include a source power that is a radio-frequency power forgenerating plasma and a bias power that is a radio-frequency power fordrawing ions, to the inside of a processing container.

The present disclosure provides a technology of controlling the amountand quality of radicals and ions.

SUMMARY

An aspect of the present disclosure provides a control method of aplasma processing apparatus including a first electrode that places aworkpiece thereon. The control method includes supplying a bias power tothe first electrode, and supplying a source power having a frequencyhigher than that of the bias power into a plasma processing space. Thesource power has a first state and a second state. The control methodfurther includes a first control process of alternately applying thefirst state and the second state of the source power in synchronizationwith a signal synchronized with a cycle of a radio frequency of the biaspower, or a phase within one cycle of a reference electrical state thatrepresents any one of a voltage, current, and electromagnetic fieldmeasured in a power feeding system of the bias power.

The foregoing summary is illustrative only and is not intended to be inany way limiting. In addition to the illustrative aspects, embodiments,and features described above, further aspects, embodiments, and featureswill become apparent by reference to the drawings and the followingdetailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view illustrating an example of a plasma processingapparatus according to an embodiment.

FIG. 2A is a view illustrating an example of a configuration of acontroller according to the embodiment.

FIGS. 2B and 2C are views illustrating a case where a control isperformed using a phase signal of a sensor attached to a power feedingsystem according to the embodiment, or a case where a control isperformed using a signal synchronized with a cycle of a radio frequencyof a bias power.

FIG. 3 is a view illustrating an example of a timing for supplying HF inaccordance with a phase within one cycle of LF according to theembodiment.

FIGS. 4A to 4C are views illustrating an example of a timing forsupplying HF in accordance with a phase within one cycle of LF accordingto the embodiment.

FIG. 5 is a view illustrating an example of a relationship among a phasewithin one cycle of LF, a plasma density Ne, and a self-bias Vdcaccording to the embodiment.

FIG. 6 is a view illustrating an example of a reflected wave poweraccording to the embodiment.

FIG. 7 is a view illustrating an example of a reflected wave poweraccording to the embodiment.

FIGS. 8A and 8B are views illustrating a control method according toModification 1 of the embodiment.

FIGS. 9A and 9B are views illustrating a control method according toModification 2 of the embodiment.

FIGS. 10A and 10B are views illustrating a control method according toModification 3 of the embodiment.

FIGS. 11A and 11B are views illustrating a control method according toModification 4 of the embodiment.

FIG. 12 is a view illustrating an example of an intermodulationdistortion (IMD) according to the embodiment.

FIG. 13A is a timing chart illustrating a control method according toModification 5-1 of the embodiment.

FIG. 13B is a timing chart illustrating a control method according toModification 5-2 of the embodiment.

FIG. 13C is a timing chart illustrating a control method according toModification 5-3 of the embodiment.

FIG. 13D is a timing chart illustrating a control method according toModification 5-4 of the embodiment.

FIG. 14 is a timing chart illustrating a control method according toModification 6 of the embodiment.

FIG. 15A is a timing chart illustrating a control method according toModification 7-1 of the embodiment.

FIG. 15B is a timing chart illustrating a control method according toModification 7-2 of the embodiment.

FIG. 15C is a timing chart illustrating a control method according toModification 7-3 of the embodiment.

FIG. 15D is a timing chart illustrating a control method according toModification 7-4 of the embodiment.

FIGS. 16A and 16B are views illustrating an example of a reflected wavepower of a source power according to the embodiment.

FIG. 17 is a timing chart illustrating a control method according toModification 8 of the embodiment.

FIG. 18 is a timing chart illustrating a control method according toModification 9 of the embodiment.

FIG. 19 is a timing chart illustrating a control method according toModification 10 of the embodiment.

FIG. 20 is a timing chart illustrating a control method according toModification 11 of the embodiment.

FIG. 21 is a timing chart illustrating a control method according toModification 12 of the embodiment.

FIG. 22 is a timing chart illustrating a control method according toModification 13 of the embodiment.

DETAILED DESCRIPTION

Embodiments for implementing the present disclosure will be describedwith reference to the drawings. In the descriptions and the drawingsherein, components having a substantially similar configuration will bedenoted by the same reference numerals, and overlapping descriptionsthereof will be omitted.

Hereinafter, the frequency of the source power (radio frequency) may bereferred to as “HF” (high frequency), and the source power may bereferred to as the “HF power.” The frequency of the bias power (radiofrequency) which is lower than the frequency of the source power may bereferred to as “LF” (low frequency), and the bias power may be referredto as the “LF power.” In addition the bias power may be a fixed orvariable DC voltage waveform.

[Introduction]

When radio-frequency powers of two different frequencies which include asource power that is a radio-frequency power for generating plasma and abias power that is a radio-frequency power for drawing ions are appliedto the inside of a processing container, an intermodulation distortion(IMD) may occur as a reflected wave power.

The IMD causes an occurrence of a matching defect, and due to thereflection characteristics, a radio-frequency power supply capable ofinputting a power larger than an originally required radio-frequencypower is necessary in order to maintain plasma. Thus, in order to reducethe occurrence of IMD, the related art optimizes the cable length of acoaxial cable which is used for a power feeding line of theradio-frequency power supply.

However, the IMD occurs at a frequency of the sum or subtraction of thefundamental wave and/or the harmonic wave of the HF power and thefundamental wave and/or the harmonic wave of the LF power. Thus, in themethod of optimizing the cable length of the coaxial cable, a reflectedwave power of a radio-frequency power of a certain frequency may bereduced, but a reflected wave power of another frequency generated fromthe sum or subtraction of the fundamental waves and/or the harmonicwaves of the HF power and the LF power that are included in the IMD maynot be eliminated.

Further, as the frequency of the LF power is relatively low, the IMDoccurs at a frequency relatively close to the fundamental wave of the HFpower. Thus, it may be conceived to increase the frequency of the LFpower as much as possible, so as to suppress the occurrence of IMD atthe frequency relatively close to the fundamental wave of the HF power.However, a satisfactory process result has been recently obtained whenthe frequency of the LF power is relatively low, especially, in anetching with a high aspect ratio. That is, since the etching ratedecreases as a hole, with a high aspect ratio, is deeply etched, acontrol is performed to set the frequency of the LF power to arelatively lower frequency and to increase the power. As a result, theetching rate may be increased in the etching with a high aspect ratio.However, since the IMD further increases under this process condition,the reflected wave power of the radio-frequency power becomes high dueto the high power and the relatively low frequency of the LF power. Inparticular, when the LF power and the HF power are applied to the sameelectrode, the reflected wave power of the radio-frequency powerincreases.

For example, FIG. 12 illustrates an example of a reflected wave powerwhich is generated when the HF power of a predetermined frequency isapplied to an electrode to which the LF power has been applied. Theintensity of the IMD periodically varies in synchronization with thephase of LF Vpp (peak to peak). For example, in the example of FIG. 12,the IMD becomes substantially 0 W near the maximum positive value of thepotential of LF, that is, no reflection occurs. The IMD is relativelylow in the range in which the potential of LF is negative. The maximumreflected wave power is generated, and the IMD becomes maximum, over therange in which the potential of LF becomes negative after exceeding themaximum positive value.

In consideration of the timing when the IMD occurs, the inventorspropose a control method of suppressing the occurrence of IMD accordingto the phase of LF and a plasma processing apparatus that executes thecontrol method. Further, the inventors propose a control method ofcontrolling the radio-frequency powers of the two different frequencieswhich include LF and HF, so as to control the amount and quality ofradicals and ions.

[Entire Configuration of Plasma Processing Apparatus]

First, an example of a plasma processing apparatus 1 according to anembodiment will be described with reference to FIG. 1. FIG. 1 is a viewillustrating an example of a plasma processing apparatus according to anembodiment.

The plasma processing apparatus 1 according to the embodiment is acapacitively coupled parallel plate plasma processing apparatus, andincludes a cylindrical processing container 10 formed of, for example,aluminum with an anodized surface. The processing container 10 isgrounded.

A columnar support 14 is disposed on the bottom of the processingcontainer 10 via an insulating plate 12 made of ceramics or the like,and a stage 16 made of, for example, aluminum is provided on the support14. The stage 16 makes up a lower electrode, and a wafer W which is anexample of a workpiece is placed on the stage 16 via an electrostaticchuck 18.

The electrostatic chuck 18 is provided on the upper surface of the stage16 to adsorb and hold the wafer W thereon by an electrostatic force. Theelectrostatic chuck 18 has a structure in which an electrode 20 made ofa conductive film is sandwiched between a pair of insulating layers orinsulating sheets. A DC power supply 22 is connected to the electrode20. A DC voltage output from the DC power supply 22 is applied to theelectrode 20. The wafer W is adsorbed and held on the electrostaticchuck 18 by the electrostatic force such as the Coulomb force generatedby the application of the DC voltage.

A conductive edge ring 24 made of, for example, silicon is disposed atthe periphery of the wafer W on the stage 12. The edge ring 24 may bereferred to as a focus ring. A cylindrical inner wall member 26 made of,for example, quartz is provided on the lateral surfaces of the stage 16and the support 14.

A coolant chamber 28 is provided, for example, in an annular shapeinside the support 14. A coolant, for example, cooling water having apredetermined temperature is supplied in a circulative manner from achiller unit provided outside to the coolant chamber 28 through pipes 30a and 30 b, and the processing temperature of the wafer W on the stage16 is controlled by the temperature of the coolant. The coolant is anexample of a temperature adjustment medium that is supplied in acirculative manner to the pipes 30 a and 30 b, and the temperatureadjustment medium may not only cool but also heat the stage 16 and thewafer W.

A heat transfer gas, for example, He gas is supplied between the uppersurface of the electrostatic chuck 18 and the back surface of the waferW from a heat transfer gas supply mechanism via a gas supply line 32.

An upper electrode 34 is provided above the stage 16 to face and beparallel with the stage 16. The space between the upper electrode 34 andthe lower electrode serves as a plasma processing space. The upperelectrode 34 forms a surface that faces the wafer W on the stage 16 andis in contact with the plasma processing space, that is, a facingsurface.

The upper electrode 34 is supported on the upper portion of theprocessing container 10 via an insulating shielding member 42. The upperelectrode 34 includes an electrode plate 36 that makes up the surfacefacing the stage 16 and is provided with a large number of gas injectionholes 37, and an electrode support 38 that detachably supports theelectrode plate 36 and is made of a conductive material, for example,aluminum with an anodized surface. The electrode plate 36 may be formedof, for example, silicon or SiC. A gas diffusion chamber 40 is providedinside the electrode support 38, and a large number of gas flow holes 41extend downward from the gas diffusion chamber 40 to communicate withthe gas injection holes 37.

A gas inlet port 62 is formed in the electrode support 38 to introduce aprocessing gas into the gas diffusion chamber 40, a gas supply pipe 64is connected to the gas inlet port 62, and a processing gas source 66 isconnected to the gas supply pipe 64. In the gas supply pipe 64, a massflow controller (MFC) 68 and an opening/closing valve 70 are provided inthis order from the upstream side. Then, a processing gas for an etchingis supplied from the processing gas source 66. The processing gasreaches the gas diffusion chamber 40 from the gas supply pipe 64, and isinjected in a shower form into the plasma processing space from the gasinjection holes 37 through the gas flow holes 41. In this way, the upperelectrode 34 functions as a shower head that supplies the processinggas.

A variable DC power supply 50 is connected to the upper electrode 34,and a DC voltage is applied from the variable DC power supply 50 to theupper electrode 34. A controller 200 controls the polarity andcurrent/voltage of the variable DC power supply 50 and electronicswitches for turning the current or voltage ON/OFF.

A first radio-frequency power supply 48 is connected to the stage 16 viaa power feeding rod 47 and a matching unit 46. The first radio-frequencypower supply 48 applies the LF power to the stage 16. As a result, ionsare drawn into the wafer W on the stage 16. The first radio-frequencypower supply 48 outputs a LF power having a frequency that falls withina range of 200 kHz to 13.56 MHz. The matching unit 46 matches theinternal impedance of the first radio-frequency power supply 48 and aload impedance with each other.

A second radio-frequency power supply 90 is connected to the stage 16via a power feeding rod 89 and a matching unit 88. The secondradio-frequency power supply 90 applies the HF power to the stage 16.The frequency of HF is higher than the frequency of LF, and the secondradio-frequency power supply 90 outputs an HF power having a frequencyof 13.56 MHz or higher. For example, an HF power of 100 MHz which ishigher than an LF power of 400 kHz may be output. The matching unit 88matches the internal impedance of the second radio-frequency powersupply 90 and a load impedance with each other. A filter 94 may beconnected to the stage 16 to cause a predetermined radio frequency topass through the ground. The HF power supplied from the secondradio-frequency power supply 90 may be applied to the upper electrode34.

An exhaust port 80 is provided in the bottom of the processing container10, and an exhaust device 84 is connected to the exhaust port 80 via anexhaust pipe 82. The exhaust device 84 includes a vacuum pump such as aturbo molecular pump, and is able to reduce the pressure inside theprocessing container 10 to a desired degree of vacuum. A carry-in/outport 85 for the wafer W is provided in the side wall of the processingcontainer 10, and is openable/closable by a gate valve 86. A depositshield 11 is detachably provided along the inner wall of the processingcontainer 10 to prevent etching by-products (deposits) from adhering tothe processing container 10. That is, the deposit shield 11 makes up thewall of the processing container. The deposit shield 11 is also providedon the outer periphery of an inner wall member 26. An exhaust plate 83is provided between the deposit shield 11 close to the wall of theprocessing container and the deposit shield 11 close to the inner wallmember 26, at the bottom of the processing container 10. For the depositshield 11 and the exhaust plate 83, an aluminum material coated withceramics such as Y₂O₃ may be used.

When an etching is performed with the plasma processing apparatus 1having the configuration described above, first, the gate valve 86 isbrought into an open state, and the wafer W to be etched is carried intothe processing container 10 through the carry-in/out port 85 and placedon the stage 16. Then, a processing gas for the etching is supplied fromthe processing gas source 66 to the gas diffusion chamber 40 at apredetermined flow rate, and supplied into the processing container 10through the gas flow holes 41 and the gas injection holes 37. The insideof the processing container 10 is exhausted by the exhaust device 84,such that the pressure inside the processing container 10 becomes a setvalue within a range of, for example, 0.1 Pa to 150 Pa. Here, variousgases that are used in related arts may be employed as the processinggas, and for example, a gas containing a halogen element such as C₄F₈gas may be appropriately used. Other gases such as Ar gas and O₂ gas maybe contained.

As described above, in a state where the etching gas is introduced intothe processing container 10, the HF power is applied to the stage 16from the second radio-frequency power supply 90. Further, the LF poweris applied to the stage 16 from the first radio-frequency power supply48. Further, the DC voltage from the variable DC power supply 50 isapplied to the upper electrode 34. Further, the DC voltage from the DCpower supply 22 is applied to the electrode 20, and the wafer W is heldon the stage 16.

The processing gas injected from the gas injection holes 37 of the upperelectrode 34 is dissociated and ionized mainly by the HF power, so thatplasma is generated. The processing target surface of the wafer W isetched by radicals or ions in the plasma. By applying the LF power tothe stage 16 so as to control the ions in the plasma, it is possible tobroaden a plasma control margin such as enabling etching of a hole witha high aspect ratio.

The plasma processing apparatus 1 is provided with the controller 200that controls the entire operation of the apparatus. The controller 200executes desired plasma processing such as an etching, according to arecipe stored in a memory such as a read only memory (ROM) or a randomaccess memory (RAM). In the recipe, for example, process time, apressure (exhaust of gas), a radio-frequency power or voltage, flowrates of various gases, the temperature inside the processing container(e.g., the temperature of the upper electrode, the temperature of theside wall of the processing container, the temperature of the wafer W,and the temperature of the electrostatic chuck), and the temperature ofthe coolant output from the chiller are set as control information ofthe apparatus for process conditions. The recipe that represents theprograms or process conditions may be stored in a hard disk or asemiconductor memory. The recipe may be set at a predetermined positionin a portable computer-readable storage medium such as a CD-ROM or a DVDin a state of being stored in the medium, and may be read out therefrom.

ON/OFF or High/Low of the HF power may be controlled in synchronizationwith a signal synchronized with a cycle of a radio frequency of the biaspower, or a phase within one cycle of any one of a voltage, current, andelectromagnetic field measured in a power feeding system of the biaspower. For example, the controller 200 may control ON/OFF or High/Low ofthe HF power to be synchronized with the phase within one cycle of thevoltage or current of LF. As a result, the amount and quality of ionsand radicals may be controlled. Further, the occurrence of IMD may bereduced.

The power feeding system of the bias power refers to the firstradio-frequency power supply 48→the matching unit 46→the power feedingrod 47→the stage 16→(plasma)→the upper electrode 34→(ground). Any one ofthe voltage, current, and electromagnetic field measured in the powerfeeding system of the bias power refers to a voltage, current, orelectromagnetic field measured in the portion from the firstradio-frequency power supply 48 to the stage 16 through the inside ofthe matching unit 46 and the power feeding rod 47, and in the upperelectrode 34.

The state of the signal synchronized with the cycle of the radiofrequency of the bias power or any one of the voltage, current, andelectromagnetic field measured in the power feeding system of the biaspower may be referred to as a “reference electrical state.” The HF power(source power) is controlled such that a first state and a second stateto be described later are alternately applied in synchronization withthe phase within one cycle of the reference electrical state.

When any one of the voltage, current, and electromagnetic field measuredin the power feeding system of the bias power is the “referenceelectrical state,” the reference electrical state may be a voltage,current or electromagnetic field measured in any one of the members fromthe stage 16 to the inside of the matching unit connected via the powerfeeding rod 47.

As the method of measuring the reference electrical state in the powerfeeding system of the bias power, there is, for example, a method ofinstalling a voltage probe, a current probe or a BZ probe (a probe formeasuring an induced magnetic field) near any one portion of the powerfeeding system of the bias power, and measuring a voltage, current orinduced magnetic field of the portion.

For example, FIG. 2B is an example of a case where the “referenceelectrical state” is any one of a voltage, current, and electromagneticfield measured in the power feeding system of the bias power. Forexample, in FIG. 2B, the processor 100 inputs any one of a voltage orcurrent of HF, a voltage or current of LF, a phase signal of HF, and aphase signal of LF from a sensor such as a VI probe attached to thepower feeding system. The processor 100 alternately applies the firststate and the second state of the source power in synchronization withthe phase within one cycle of the reference electrical state thatrepresents any one of the input voltage or current of HF, voltage orcurrent of LF, phase signal of HF, and phase signal of LF.

The processor 100 may generate a signal synchronized with the cycle ofthe radio frequency of the bias power output from the firstradio-frequency power supply 48, without using the signal from thesensor. In this case, the state of the signal may be set as thereference electrical state. Further, the process of measuring thereference electrical state in the power feeding system of the bias powermay be omitted. For example, in FIG. 2C, the processor 100 inputs aphase signal of LF (small power waveform) or a signal related toinformation of the bias power from the first radio-frequency powersupply 48, and generates a signal synchronized with the cycle of theradio frequency of the bias power based on the input signal. Theprocessor 100 outputs the generated signal to the second radio-frequencypower supply 90. Based on this signal, the second radio-frequency powersupply 90 alternately applies the first state and the second state ofthe source power.

The processor 100 may generate a signal synchronized with the cycle ofthe radio frequency of the bias power, without using the signal from thefirst radio-frequency power supply 48. In this case, the processor 100generates, for example, a signal having the cycle represented by the LFof FIG. 3, and generates an ON/OFF signal represented by the HF of FIG.3. The processor 100 outputs the generated signal to the firstradio-frequency power supply 48 and the second radio-frequency powersupply 90. Based on this signal, the first radio-frequency power supply48 outputs the bias power. Based on this signal, the secondradio-frequency power supply 90 alternately applies the first state andthe second state of the source power.

The stage 16 is an example of a first electrode that places the wafer Wthereon. The upper electrode is an example of a second electrode thatfaces the first electrode. The first radio-frequency power supply 48 isan example of a bias power supply that supplies the LF power to thefirst electrode. The second radio-frequency power supply 90 is anexample of a source power supply that supplies the HF power having afrequency higher than the LF power, to the first or second electrode.The controller 200 is an example of a controller that controls the biaspower supply and the source power supply. The potential of the lowerelectrode (the stage 16) to which the bias power is applied may bereferred to as an electrode potential. In addition to the bias powerbeing applied as a LF power (RF), it may also be applied as a DC voltagethat is either fixed over time, or amplitude variable. An exemplaryvariable DC voltage waveform for the bias power is an ON/OFF modulatedwaveform (square wave) where a duty cycle of a high voltage pulsefollowed by a lower voltage pulse may vary from 100% (always on) to 1%,with a waveform period of 5 seconds per cycle to 1 msec/cycle.Alternatively, instead of square wave pulses (or rectangular pulses withonly two voltage levels—high and low), the bias voltage waveform mayhave other shapes, such as triangular wave pulses defined by peakvoltage, and ramp-up/ramp-down times, as well a saw-tooth waveforms.

[Configuration of Controller]

The specific configuration of the controller 200 will be described withreference to FIG. 2A. The controller 200 includes a processor 100, asignal generation circuit 102, directional couplers 105 and 108, areflection detector 111, and an oscilloscope 112.

In the power feeding line of the first radio-frequency power supply 48,the directional coupler 105 is connected between the firstradio-frequency power supply 48 and the matching unit 46. In the powerfeeding line of the second radio-frequency power supply 90, thedirectional coupler 108 is connected between the second radio-frequencypower supply 90 and the matching unit 88.

The directional coupler 105 gives a portion of a traveling wave power Pfof LF to the oscilloscope 112. The directional coupler 108 gives aportion of a traveling wave power and a reflected wave power of HF tothe oscilloscope 112.

In an embodiment, the frequency of LF displayed on the oscilloscope 112is, for example, 400 kHz, and the frequency of HF displayed on theoscilloscope 112 is, for example, 100 MHz. Accordingly, the waveform ofthe traveling wave power of LF, and the waveforms of the traveling wavepower and the reflected wave power of HF may be observed in theoscilloscope 112.

The directional coupler 108 separates a certain portion of the reflectedwave of HF, and gives the separated portion to the reflection detector111. The reflection detector 111 is configured by, for example, aspectrum analyzer, a power meter or the like, and measures a wavelengthin which the IMD occurs, a degree of the occurring IMD or a degree ofthe reflected wave power. The IMD refers to a reflected wave power thatoccurs from plasma when the HF power is applied to the upper or lowerelectrode of the plasma processing apparatus 1 (the lower electrode inthe embodiment), and the LF power is applied to the lower electrode,according to a frequency of the sum or subtraction of the fundamentalwave and/or the harmonic wave of LF and the fundamental wave and/or theharmonic wave of HF.

The directional coupler 105 gives a portion of the traveling wave powerof LF to the processor 100. The processor 100 creates an HFsynchronization signal to be synchronized with the traveling wave powerof LF. For example, the processor 100 may create the HF synchronizationsignal in synchronization with a positive timing of the traveling wavepower of LF. Instead of the directional coupler 105, the waveform of LFdetected using a sensor such as a VI probe or the like may be given tothe processor 100.

The processor 100 gives the created synchronization signal to the signalgeneration circuit 102. The signal generation circuit 102 generates acontrol signal that is synchronized with the traveling wave power of LFfrom the given synchronization signal, and gives the generated controlsignal to the second radio-frequency power supply 90 and the firstradio-frequency power supply 48.

There are two methods for generating the control signal as follows. In acase where the first radio-frequency power supply 48 is a general powersupply, the directional coupler 105 takes out a portion of the voltageor current of LF output from the first radio-frequency power supply 48as a waveform, and inputs the waveform to the processor 100. However,the present disclosure is not limited thereto, and the processor 100 maydirectly input a portion of the LF power or the like from the firstradio-frequency power supply 48. The processor 100 creates an ON signalhaving an arbitrary delay and an arbitrary width from the signal of theinput waveform, and transmits the ON signal to the signal generationcircuit 102. The ON signal is an example of the synchronization signal.

The signal generation circuit 102 sends a command signal to the secondradio-frequency power supply 90 in order to generate the HF power duringthe ON signal. As the command signal, a control signal for generatingthe HF power during the ON signal or the ON signal itself is usedaccording to the input form of the second radio-frequency power supply90.

In a case where the first radio-frequency power supply 48 is anamplifier that amplifies the LF power, voltage or current, the signalgeneration circuit 102 may take out a portion of the LF power or thelike output from the first radio-frequency power supply 48 as awaveform, without using a signal from the directional coupler 105, andcreate an ON signal having an arbitrary delay and an arbitrary widthfrom the signal of the waveform. The signal generation circuit 102transmits the signal of the waveform and the ON signal to the secondradio-frequency power supply 90.

The method of generating the control signal described above is anexample, and is not limited thereto. As long as the control signal maybe generated for controlling ON/OFF or High/Low of the HF power to bealternately applied in synchronization with the phase within one cycleof the reference electrical state (e.g., the phase within one cycle ofthe LF power or current, or the electrode potential) from the givensynchronization signal, the present disclosure is not limited to thecircuit of the controller 200 illustrated in FIG. 2A, and other hardwareor software components may be used.

The amplifier of the first radio-frequency power supply 48 amplifies theamplitude of a modulation signal of LF of 400 kHz (amplitude modulation(AM)), and supplies the LF to the lower electrode. The amplifier of thesecond radio-frequency power supply 90 amplifies the amplitude of amodulation signal of HF of 100 MHz, and supplies the HF to the lowerelectrode.

FIG. 3 is a view illustrating an example of the waveform of the LFvoltage or current, and the HF voltage or current applied at a timingwhen the LF voltage or current is positive. When the electrode potentialrepresented in the second waveform from the bottom is positive, the HFvoltage or current is controlled to be a positive value (turned ON).When the electrode potential is negative, the HF voltage or current iscontrolled to be 0 (turned OFF). Basically, since the electrodepotential is determined by the LF voltage or current, the HF voltage orcurrent is turned OFF at a timing when the LF voltage or current isnegative, and turned ON at a timing when the LF voltage or current ispositive.

The processor 100 may generate a synchronization signal for controllingthe HF power during a time period including a timing when the electrodepotential is positive. However, the processor 100 is not limitedthereto, and may create a synchronization signal for controlling the HFpower in a short time including a timing when the electrode potentialbecomes negatively deepest.

[Timing for Supplying HF Power]

Next, the timing for supplying the HF power in an embodiment will bedescribed with reference to FIGS. 4A to 4C. FIGS. 4A to 4C are viewsillustrating an example of the timing for supplying the HF poweraccording to the embodiment.

In FIGS. 4A to 4C, the vertical axis represents the electrode potential.The electrode potential is substantially the same as the potential ofthe wafer. The electrode potential is a potential when the LF voltageand the HF voltage overlap with each other. Here, Vpp of the LF voltagehaving the LF frequency of 400 kHz is much larger than Vpp of the HFvoltage having the HF frequency of 100 MHz. Thus, basically, theelectrode potential is determined by the LF voltage, and vibrates withthe width (amplitude) of Vpp of the HF voltage.

As for the sheath on the electrode as well, the sheath thickness isbasically determined according to the LF voltage. The electrodepotential when the LF voltage is negative becomes negatively deeper thanthe electrode potential when the LF voltage is positive, due to aso-called self-bias voltage Vdc. Since the electrode potential is closeto the plasma potential when the electrode potential is positive withrespect to the ground potential, a portion of high-flux electrons mayflow into the electrode, and when the electrode potential is negativewith respect to the ground potential, ions flow into the electrode.

Since the electrode is floating from the ground by a blocking capacitor(the matching unit in the embodiment), electrons that flow into theelectrode do not flow to the ground. Accordingly, electrons flow to andare accumulated in the electrode in a certain cycle (half cycle) inwhich the surface of the electrode has the positive potential withrespect to plasma. However, due to the accumulated electrons, thesurface of the electrode is negatively charged, and a bias which isnegative with respect to plasma is generated. Due to the negative bias,ions flow to the surface of the electrode. As a result, a sheath isformed on the surface of the electrode.

Finally, the surface of the electrode approaches the plasma potential,and when the electrons that flow to the electrode at this time and theions that normally flow to the electrode by the negative bias arebalanced, the DC component of the electrode potential is the self-biasvoltage Vdc.

FIG. 3 schematically illustrates the electrode potential thatcorresponds to the phase of LF, the plasma potential that corresponds tothe phase of LF, the sheath thickness, and the impedance Z. The plasmapotential becomes slightly higher than the highest potential in theprocessing container 10. Accordingly, when the electrode potential ispositive, the plasma potential becomes slightly higher than theelectrode potential, and when the electrode potential is negative, andwhen the potential of the wall of the processing container 10 is 0, theplasma potential becomes slightly higher than the potential (0) of thewall.

In a case where the electrode potential becomes negatively deep due tothe self-bias voltage Vdc when the LF voltage is negative, a largevoltage is applied to the electrode when the electrode potential isnegative since the sheath thickness is proportional to the voltage, andthus, the sheath thickness increases. Meanwhile, when the electrodepotential is positive, a smaller voltage than that when the electrodepotential is negative is applied to the electrode, and thus, the sheaththickness decreases.

In the embodiment, since the LF power and the HF power are applied tothe stage 16 (the lower electrode), the electrode potential illustratedin FIGS. 4A to 4C corresponds to the potential of the lower electrode.In accordance with the phase of LF, there are a timing when the sheathon the stage 16 is thin and substantially flat, and a timing when thesheath is thick. Thus, assuming that the sheath is a capacitor, when thesheath is thin, the capacitance of the capacitor becomes large, and theimpedance Z of the sheath becomes lower than the impedance Z=1/ωC. Thatis, when the electrode potential is positive, the sheath is thin, andhence, the impedance Z is low and substantially constant. Meanwhile,when the electrode potential is negative, the sheath is thick, theimpedance Z is high, and the variation thereof is large. Further, theimpedance Z is substantially determined according to the LF voltage.Thus, it becomes difficult to match the impedance of the HF power.Especially, when the electrode potential is negative, that is, when theLF voltage is negative, the impedance is high, and the variation thereofis large. Thus, it becomes difficult to match the impedance of the HFpower.

The matching unit 88 that matches the impedance of the HF power withrespect to the variation of the impedance Z is able to follow up to afrequency of maximum about 1 Hz with the operation of a motor, but mayhave a difficulty in following a frequency higher than 1 Hz and takes amatching. Thus, the matching unit 88 may match the impedance of the HFpower with one of timings of the impedance that varies every momentaccording to the phase of LF. In this state, since the matching unit 88does not take a matching at phases other than the matched one timing,the reflected wave power of IMD is large.

Thus, in the embodiment, as illustrated in FIGS. 4A and 4B, when theelectrode potential is positive, the HF power is controlled to be turnedON or High, and when the electrode potential is negative, the HF poweris controlled to be turned OFF or Low.

In the embodiment, when the electrode potential is positive, theimpedance Z is substantially constant, and hence, when the HF power issupplied at this timing, a matching may be easily taken. Thus, at thistiming, the HF power is controlled to be turned ON or High. Meanwhile,when the electrode potential is negative, the impedance is high, and thevariation thereof is large. Hence, it is difficult to take a matchingeven when the HF power is supplied at this timing. Thus, at this timing,the HF power is controlled to be turned OFF or Low. As a result, theoccurrence of IMD may be reduced.

As illustrated in FIG. 4B, when the HF power is controlled to be High orLow, the HF power is not turned OFF and is maintained in the Low stateat the timing when the electrode potential is negative, and thus, it ispossible to suppress the decrease in plasma density, as compared to acase where the HF power is controlled to be turned ON or OFF. Further,the HF power applied at the timing when the electrode potential isnegative is lower than the HF power applied at the timing when theelectrode potential is positive, so that the occurrence of IMB may besuppressed.

The control method of controlling the HF power to be turned ON or Highin synchronization with the timing when the electrode potential ispositive is an example, and the present disclosure is not limitedthereto. The HF power may be controlled to be turned ON or High when atleast a portion of the phase of the reference electrical state ispositive. Further, the HF power may be controlled to be turned ON orHigh when at least a portion of the phase of the reference electricalstate is negative. That is, the HF power (the source power) may have afirst state and a second state smaller than the first state, and thetime period of the first state may include a timing at which the phaseof the reference electrical state peaks. In this case, the peak may be apositive peak or a negative peak. Further, the time period of the firststate may include a timing when at least a portion of the phase of thereference electrical state is positive. Further, the time period of thefirst state may include a timing when at least a portion of the phase ofthe reference electrical state is negative. As for the HF power, notonly a rectangular wave that coincides with the timing when the phase ofthe reference electrical state is positive, but also a substantiallyrectangular wave including at least one of an ascending slow-up and adescending slow-down may be applied. The HF power may be applied at atleast one of a timing shifted by a predetermined time after the timingwhen the phase of the reference electrical state is positive, and atiming shifted by a predetermined time before the timing when the phaseof the reference electrical state is positive.

The following is an example of the control method where the HF power isapplied at a timing shifted by a predetermined time from the timing whenthe phase of the reference electrical state is positive. In a case wherethe HF power is applied only when the phase of the reference electricalstate is positive, the ion energy decreases. A process may require arelatively large ion energy according to a type of etching. In thatcase, the reference electrical state of LF goes into the negative phasefrom the positive phase, and the HF power is applied until ion energy ofa desired magnitude is obtained. As a result, the process requiring therelatively large ion energy may be implemented.

The width of the time for supplying the HF power may be adjusted to beshortened or lengthened by a predetermined time, based on the timingwhen the phase of the reference electrical state is positive. Forexample, the HF power may be further supplied for a predetermined timebefore and after the timing when the phase of the reference electricalstate is positive, in addition to the timing when the phase of thereference electrical state is positive.

The HF power may be supplied at the timing when the phase of thereference electrical state is negative. However, the impedance isrelatively high and varies with time at the timing when the phase of thereference electrical state is negative. Accordingly, in this case, theHF power may be controlled to be turned ON for a relatively short timewidth which is the timing when the phase of the reference electricalstate is negative. For example, the timing or width for applying the HFpower may be adjusted with a circuit having a gate function or a delayfunction. The reflection intensity in one cycle of the referenceelectrical state may be measured in advance, and the HF power may becontrolled using a circuit having an automatic adjustment function toapply the HF power at a timing when the reflection of the LF power issmall in view of the measurement result.

For example, as illustrated in FIG. 4C, the HF power may be controlledto be turned ON or High for a relatively short time width that includesthe time when the self-bias Vdc of the electrode becomes negatively thelargest, at the timing when the electrode potential is negative, and maybe controlled to be turned OFF or Low during the other time period.Further, the reflected wave power may be detected in advance, andaccording to the magnitude of the reflected wave power, the HF power maybe controlled to be turned OFF or Low for a time when the reflected wavepower is high, and may be controlled to be turned ON or High for a timewhen the reflected wave power is low. When the HF power is applied forthe short time that corresponds to the time width including the timewhen the electrode potential illustrated in FIG. 4C becomes negativelythe largest, it is possible to implement the injection of relativelystrong ions in a certain etching such as HARC (high aspect ratiocontact). As a result, the etching speed or the etching shape may beimproved.

As described above, in the control method of the plasma processingapparatus 1 according to the embodiment, ON/OFF or High/Low of the HFpower is controlled in synchronization with the phase within one cycleof the reference electrical state. As a result, the occurrence of IMDmay be reduced. Further, the ion energy may be controlled, so that theamount and quality of radicals and ions may be controlled.

As illustrated in FIG. 3 and FIGS. 4A to 4C, the state where the HFpower is controlled to be turned ON or High is an example of the firststate, and the state where the HF power is controlled to be turned OFFor Low is an example of the second state.

The control method of the plasma processing apparatus 1 according to theembodiment includes a first control process of alternately applying thefirst state and the second state in synchronization with the phasewithin one cycle of the reference electrical state. The second state maybe smaller than the first state, and the power of the second state maybe 0 or a value smaller than the first state, other than 0.

[Example of Effects]

Next, descriptions will be made on an example of effects obtained fromcontrolling ON/OFF or High/Low of the HF power in synchronization withthe phase within one cycle of the reference electrical state, withreference to FIGS. 5 to 7. The graph of FIG. 5 illustrates an example ofa relationship among the phase of LF, the plasma density Ne, and theabsolute value of the self-bias |Vdc| according to the embodiment. FIGS.6 and 7 are views illustrating an example of the reflected wave poweraccording to the embodiment.

The graph of FIG. 5 illustrates an actual measurement result obtained byperiodically applying the HF power for a time width of about 40% of onecycle of the reference electrical state, while changing the phase. Theleft vertical axis of the graph represents the plasma density Ne (cm⁻³),and the right vertical axis of the graph represents the absolute valueof the self-bias |Vdc|(V). When the HF power and the LF power areapplied to the lower electrode of the plasma processing apparatus 1while overlapping with each other, the sheath of the lower electrodevaries in the cycle of LF. As a result, the impedance Z varies, and theplasma density Ne and the self-bias Vdc vary.

In a case where the HF power is turned ON at the timing when theelectrode potential is positive and turned OFF at the timing when theelectrode potential is negative (see the upper left diagram in FIG. 5),the plasma density Ne is high so that the plasma generation efficiencymay be improved, as illustrated in the region “a” of the lower graph ofFIG. 5. In the region “a,” the absolute value of the self-bias |Vdc| islow so that the occurrence of IMD may be effectively suppressed.

In a case where the HF power is turned OFF at the timing when theelectrode potential is positive and turned ON for the short time thatincludes the time when the electrode potential becomes negatively thelargest (see the upper right diagram of FIG. 5), the plasma density Negoes into the moderate-to-high level, and the plasma generationefficiency is moderate or higher, as illustrated in the region “b” ofthe lower graph of FIG. 5. This is because when the electrode potentialis negative, a large voltage is applied to the electrode, and the sheathbecomes thick, so that the electric field of HF decreases when the HFpower is turned ON, and the plasma generation efficiency is lowered.

In the region “b,” the absolute value of the self-bias |Vdc| is high, sothat ions with the monochromatic ion energy, that is, the uniform ionenergy may be drawn into the wafer W. Especially, in a process with ahigh aspect ratio, ions with the monochromatic high energy may be drawninto the wafer W. At this time, the occurrence of IMD may increase, butby applying the HF power for the short time when the potential of thelower electrode becomes negatively the largest, the total occurrence ofIMD may be reduced, as compared to a case where the HF power is appliedat all times.

As described above, in the plasma processing apparatus 1 according tothe embodiment, the HF power is controlled to be turned ON or High basedon, for example, the timing when the electrode potential is positive, sothat the occurrence of IMD may be reduced. Further, in view of theproblem in that the sheath becomes thick at the timing when theelectrode potential is negative, and as a result, the plasma generationefficiency is lowered, the HF power is applied at the timing when theelectrode potential is positive, so that the plasma generationefficiency may be improved.

By applying the HF power for only the short time that corresponds to thetiming when the electrode potential is negatively the deepest, ions withthe monochromatic high energy may be drawn into the wafer W.

For example, the left upper and lower graphs of FIG. 6 and the waveformson the screens in (a) and (b) of the right portion of FIG. 6 representthe detection result obtained from the reflection detector 111 of thecontroller 200 and the display result in the oscilloscope 112. The leftlower graph illustrates LF Vpp and LF Vdc in one cycle of LF. As Vdc isnegatively deep, the sheath becomes thick, and as a result, the plasmageneration efficiency when the HF power is applied is lowered. The leftupper graph illustrates the traveling wave power Pf and the reflectedwave power Pr of HF with respect to LF Vpp and LF Vdc in one cycle ofLF.

The example of the display of the oscilloscope 112 in (a) of FIG. 6represents a waveform A of the traveling wave power of LF measured whenthe phase of LF is 180° as illustrated in the region “c,” and anamplitude B of the radio-frequency power on the wafer (i.e., a value ofthe sum of the LF power and the HF power). Further, “C” represents thewaveform of the traveling wave power of HF, and “D” represents thewaveform of the reflected wave power of HF. The example of the displayof the oscilloscope 112 in (b) of FIG. 6 represents a waveform A of thetraveling wave power of LF measured when the phase of LF is 0° (=360°)as illustrated in “d,” an amplitude B of the radio-frequency power onthe wafer, a waveform C of the traveling wave power of HF, and awaveform D of the reflected wave power of HF.

According to the results above, the reflected wave power in the region“d” is smaller than that in the region “c.” Accordingly, it has beenfound that the occurrence of IMD may be suppressed by alternatelyapplying the first state (e.g., the ON or High state) and the secondstate (e.g., the OFF or Low state) of the HF power, in synchronizationwith the signal synchronized with the cycle of the radio frequency ofthe bias power or the phase within one cycle of the reference electricalstate measured in the power feeding system of the bias power, such thatthe phase of LF includes 0°. For example, as described above, thecontrol according to the absolute value of the self-bias |Vdc| isperformed in the manner that the HF power is controlled to go into thefirst state at the timing when the electrode potential is positive, andgo into the second state at the timing when the electrode potential isnegative, so that the IMD is suppressed, and the plasma generationefficiency may be improved. Further, when the HF power is controlled togo into the first state or the second state at an arbitrary timingaccording to the electrode potential, ions with the high energy may bedrawn into the wafer W using the region where the plasma density Ne ishigh and the region where the absolute value of the self-bias |Vdc| ishigh. Further, in this case, the total occurrence of IMD may be reducedby applying the HF power in a pulse form.

FIG. 7 illustrates an example of LF Vpp, LF |Vdc|, the traveling wavepower Pf of HF, and the reflected wave power Pr of HF. According to thisexample, the reflected wave power Pr of HF varies up to maximum about 5times (from about 10 W to about 50 W) in the phase of one cycle of theLF voltage. Accordingly, when the HF power is controlled insynchronization with the phase within one cycle of the referenceelectrical state, the IMD may be reduced to about ⅕. Further, it hasbeen found that each of LF Vpp and LF |Vdc| may also be changed in therange in which the minimum value varies up to maximum about 1.6 times,by controlling the HF power in synchronization with the phase within onecycle of the reference electrical state.

[Modifications]

Next, control methods according to Modifications 1 to 4 of theembodiment will be described with reference to FIGS. 8A to 11B. FIGS. 8Aand 8B are views illustrating the control method according toModification 1 of the embodiment. FIGS. 9A and 9B are views illustratingthe control method according to Modification 2 of the embodiment. FIGS.10A and 10B are views illustrating the control method according toModification 3 of the embodiment. FIGS. 11A and 11B are viewsillustrating the control method according to Modification 4 of theembodiment.

(Modification 1)

In the embodiment described above, when the HF power is pulse-modulated(see the HF AM modulation in FIG. 3) in synchronization with the phasewithin one cycle of the reference electrical state, an HF power supplymay be required to pulse-modulate the HF power with the same frequencyas the frequency of LF, thereby increasing costs.

Thus, in the plasma processing apparatus 1 according to Modification 1,as illustrated in FIG. 8A, an additional circuit 250 that makes up abypass line is attached to the power feeding line connected to the firstradio-frequency power supply 48 and the second radio-frequency powersupply 90, or the lower electrode. In the additional circuit 250, a coil252 and a variable capacitor 251 are connected in series to the powerfeeding rod connected to the lower electrode, and the variable capacitor251 is connected to the processing container 10 and is grounded.

The ratio of the impedance on the side of the processing container 10 tothe load impedance on the side of plasma is represented to be relativelylarge with the additional circuit 250, so that even when the impedancevaries, the additional circuit 250 may mitigate a large variation of theimpedance Z which is the sum of the impedances of the additional circuit250 and the processing container 10, as compared to a case where theadditional circuit 250 is not provided. For example, as illustrated inFIG. 8B, the variation of the summed impedance Z is reduced by theadditional circuit 250, so that when the HF power is applied insynchronization with the phase within one cycle of the referenceelectrical state, the occurrence of IMD may be further suppressed.Further, the structure for suppressing the IMD may be simply constructedat low costs, by only attaching the additional circuit 250. Further, theadditional circuit 250 is preferable because the HF power is hardlyaffected by the LF power when the power feeding rod is branched andinserted into the second radio-frequency power supply 90. When a filteris provided between the first radio-frequency power supply 48 and thesecond radio-frequency power supply 90, the HF power is further hardlyaffected by the LF power, so that the variation of the summed impedanceZ may be reduced, and the occurrence of IMD is further suppressed. Theadditional circuit 250 may include at least one element of a coil, acapacitor, and a diode.

(Modification 2)

In the plasma processing apparatus 1 according to Modification 2, asillustrated in FIG. 9A, an impedance variation circuit 300 is attachedto the power feeding line connected to the first radio-frequency powersupply 48 and the second radio-frequency power supply 90, or the lowerelectrode. The impedance variation circuit 300 functions to change theimpedance such that a combined impedance of the load impedance on theside of plasma and the impedance of the impedance variation circuit 300becomes constant. Alternatively, the impedance variation circuit 300changes the impedance according to the phase of LF, so as to suppressthe variation of the impedance viewed from the matching unit 88. As aresult, the reflected wave power may be suppressed, and the occurrenceof IMD may be reduced. The impedance variation circuit 300 changes theimpedance within one cycle of the reference electrical state accordingto the phase (or impedance) of LF, Vdc of LF, the reflected wave powerof LF or the like, thereby suppressing the IMD.

An example of the impedance variation circuit 300 may have aconfiguration where capacitors are provided in an array form, and theconnection of the capacitors is switched by an electronic switch. Thecontroller 200 controls the electronic switch to change the impedance ofthe impedance variation circuit 300.

For example, as illustrated in FIG. 9B, the controller 200 switches theconnection of the capacitors of the impedance variation circuit 300, soas to reduce the variation of the impedance Z which is the sum of theload impedance on the side of plasma and the impedance of the impedancevariation circuit 300. As a result, when the HF power is applied insynchronization with the phase within one cycle of the referenceelectrical state, the impedance matching becomes satisfactory, and theoccurrence of IMD may be further suppressed.

The impedance variation circuit 300 may be inserted into and integratedwith the matching unit 88. The impedance variation circuit 300 ispreferable because the HF power is hardly affected by the LF power whenthe power feeding rod is branched and inserted into the secondradio-frequency power supply 90. When a filter is provided between thefirst radio-frequency power supply 48 and the second radio-frequencypower supply 90, the HF power is further hardly affected by the LFpower, so that the variation of the summed impedance Z may be reduced,and the occurrence of IMD is further suppressed.

(Modification 3)

In Modification 3, as illustrated in FIG. 10A, an electromagnet 350 isprovided on the top of the processing container 10. The position of theelectromagnet 350 is not limited to the position illustrated in FIG.10A, and may be a portion of the processing container 10, for example, aportion inside the processing container 10. The controller 200 controlsthe strength of the electromagnet 350 according to the phase (orimpedance) of the reference electrical state, the phase of LF, theelectrode potential to which the bias power is applied, LF Vdc, thereflected wave power of HF or the like, so as to control thecharacteristics of the magnetic field. For example, as illustrated inFIG. 10B, the magnetic field is controlled to be relatively strong atthe negative timing of LF Vdc when the sheath becomes thick, and iscontrolled to be relatively weak or eliminated at the positive timing ofLF Vdc when the sheath becomes thin, so as to reduce the variation ofthe impedance Z. As a result, the occurrence of IMD may be furthersuppressed. The electromagnet 350 may be a multi-pole electromagnet or afixed magnet, and is an example of a magnetic field generator thatgenerates a magnetic field. The control by the electromagnet 350represented in Modification 3 may be combined with the control by theadditional circuit 250 of Modification 1 or the impedance variationcircuit 300 of Modification 2.

(Modification 4)

When the sheath thickness varies, the apparent capacitance varies, andthe resonance frequency of HF varies. The matching unit 88 functions tocause the sum of all of the L and C components of the inductance (e.g.,the power feeding rod) and the capacitance (e.g., the sheath) inside theprocessing container 10 to resonate as the frequency of HF, so as totake a matching.

Accordingly, since the C component varies when the sheath thicknessvaries, the reflected wave power necessarily increases unless thematching unit 88 takes a matching again in response to the variation ofthe C component that corresponds to the variation of the sheaththickness. However, since it takes about 1 second to move the variablecapacitor, the matching unit 88 may not follow the variation of thesheath thickness, and thus, may not take an accurate matching.

Thus, in Modification 4, the controller 200 changes the frequency of HFby the amount of the variation of the C component that corresponds tothe variation of the sheath thickness. That is, the frequency “f” of HFis changed according to the variation of the C component thatcorresponds to the sheath thickness, based on the expression of f(supply frequency)∝1/√LC.

For example, assuming that the capacitance of the sheath on theelectrode is C, and when the capacitance C varies to four timesaccording to the variation of the sheath thickness, the frequency of HFis changed to a double. As a result, it is possible to implement a statewhere a matching is substantially taken according to the variation ofthe sheath thickness.

When the capacitance C varies to ten times according to the variation ofthe sheath thickness, the frequency of HF is changed to about 3.3 times.As a result, it is possible to implement a state where a matching issubstantially taken according to the variation of the sheath thickness.That is, in Modification 4, as illustrated in FIG. 11A, the frequency ofHF is changed based on the expression of the resonance frequencydescribed above, so as to take a matching with the variation of thesheath thickness according to the variation of one cycle of the LFvoltage. As a result, a state where a matching is substantially takenaccording to the variation of the sheath thickness is implemented, sothat the reflected wave power of HF may be reduced, and the occurrenceof IMD may be suppressed. In Modification 4, a frequency variable powersupply capable of changing the frequency of HF may be used as the secondradio-frequency power supply 90. Further, the control represented inModification 4 may be combined with at least one of the additionalcircuit 250 of Modification 1, the impedance variation circuit 300 ofModification 2, and the electromagnet 350 of Modification 3.

In all of the examples of the embodiment and the modifications describedabove, a shift time or a delay width may be adjusted by a circuit havinga gate function or a delay function, based on an original signal ormeasurement signal of any one of the phase of LF, the electrodepotential, the potential of the power feeding system, Vdc, the sheaththickness of the electrode, the light emission of plasma, the reflectionintensity of the HF power and others.

Instead of controlling the timing for applying the HF power insynchronization with the phase within one cycle of the LF voltage, apulse-type power that corresponds to the peak of the LF voltage(hereinafter, also referred to as an “LF pulse”) may be applied, and thetiming for applying the HF power may be controlled according to the LFpulse, as illustrated in FIG. 11B. That is, for example, the LF pulsethat corresponds to LF of 400 kHz may be applied by being turned ON/OFF,and the HF power may be controlled in a pulse form (an HF pulse)according to the LF pulse. The power of the LF pulse that corresponds tothe peak of the phase of the reference electrical state may be applied,and the timing for applying the HF power may be controlled according tothe LF pulse.

As described above, the strength of occurring IMD varies according tothe LF power. Thus, in the control method of the plasma processingapparatus 1 according to each of the embodiment and the modificationsdescribed above, the timing when the reflected wave power of HF isrelatively low is selected, and the HF power is applied at that timing,so that the occurrence of IMD may be reduced. By reducing the occurrenceof IMD, it is possible to improve the stability of the process and theplasma processing apparatus 1, and reduce apparatus costs. Further, theplasma density, the self-bias Vdc and others may be controlled.

However, when the time for applying the HF power is reduced, theabsolute amount of the HF power may decrease, and the plasma density Nemay decrease. Thus, the LF power and the HF power may be applied at eachof two timings including timings when the reference electrical statepeaks twice within one cycle. Further, the control method for applyingthe HF power may be freely changed. The HF power may not be applied toonly the lower electrode, but may be applied to the upper electrode.

[Control Method]

As described above, the control method of the parallel plate type plasmaprocessing apparatus 1 according to the embodiment includes supplyingthe bias power to the lower electrode that places the wafer W thereon,and applying the source power having a frequency higher than that of thebias power to the lower or upper electrode so as to supply the sourcepower into the plasma processing space. The source power has the firststate and the second state, and the control method includes the firstcontrol process of alternately applying the first state and the secondstate in synchronization with the signal synchronized with the cycle ofthe radio frequency of the bias power, or the phase within one cycle ofthe reference electrical state that represents any one of a voltage, acurrent, and an electromagnetic field measured in the power feedingsystem of the bias power.

The control method may be performed by a plasma processing apparatusother than the parallel plate type plasma processing apparatus. Thecontrol method of a plasma processing apparatus other than the parallelplate type plasma processing apparatus includes supplying the bias powerto the lower electrode, and supplying the source power having afrequency higher than that of the bias power into the plasma processingspace. In this control method as well, the source power has the firststate and the second state, and the control method includes the firstcontrol process of alternately applying the first state and the secondstate in synchronization with the phase within one cycle of thereference electrical state.

[Modifications 5-1 to 5-4]

Next, a control method of a plasma processing apparatus 1 according toeach of Modifications 5-1 to 5-4 of the embodiment will be described. InModifications 5-1 to 5-4, a control is performed for intermittentlystopping the source power and/or the bias power. FIGS. 13A to 13D aretiming charts illustrating the control methods according toModifications 5-1 to 5-4 of the embodiment.

Modification 5-1 of FIG. 13A includes a second control process ofintermittently stopping the source power in an independent cycle fromthe cycle of the reference electrical state which is represented by theLF voltage as an example, in addition to the first control process. Thefirst control process and the second control process are repeatedlyperformed.

In Modification 5-1, the LF voltage is applied in the same cycle in thefirst control process and the second control process. Meanwhile, thesource power alternately repeats the first state and the second stateone or more times in the first control process, and is intermittentlystopped in the second control process between first control processes.

In the first control process and the second control process, thefrequency of LF may be, for example, 0.1 Hz to 100 Hz. The duty ratio ofthe source power (=fourth state/(third state+fourth state)) may fall ina range of 1% to 90%.

The state of the source power synchronized with the cycle of thereference electrical state in the first control process is an example ofa third state. The state of the source power which is independent fromthe cycle of the reference electrical state in the second controlprocess is an example of a fourth state different from the third state.

The control method according to Modification 5-2 in FIG. 13B includes athird control process of intermittently stopping the bias power in anindependent cycle from the cycle of the HF voltage or current, inaddition to the first control process which is the same as Modification5-1. The state of the bias power in the third control process is anexample of the fourth state.

In Modification 5-2, the first control process and the third controlprocess are repeatedly performed. In Modification 5-2, the source powerof the third control process repeats the first state and the secondstate in the same cycle as that in the first control process.

In the first control process, the frequency of LF may be, for example,0.1 Hz to 100 Hz. The duty ratio of the bias power (=fourth state/(thirdstate+fourth state)) may fall in a range of 1% to 90%.

In the control method according to Modification 5-3 in FIG. 13C, thecontrol of the source power in the second control process ofModification 5-1 and the control of the bias power in the third controlprocess of Modification 5-2 are performed, in addition to the firstcontrol process which is the same as Modification 5-1. That is, inModification 5-3, the state where both of the source power and the biaspower are intermittently stopped is an example of the fourth state.

The cycle for intermittently stopping the bias power and the cycle forintermittently stopping the source power may be synchronized with eachother. In this case, the cycles for intermittently stopping the sourcepower and the bias power may be the same as illustrated in FIG. 13C, orthe source power may be shifted behind or in front of the bias power asillustrated in FIG. 13D. The time for stopping the source power may belonger or shorter than the time for stopping the bias power.

[Effects of Control Methods According to Modifications 5-1 to 5-4]

As described above, in the control methods according to Modifications5-1 to 5-4, the quality and amount of radicals and ions may becontrolled. Specifically, when HF is turned OFF, ions in plasma aresubstantially extinguished, whereas radicals exist without beingextinguished for some time because radicals have a long life.Accordingly, radicals may be uniformly diffused while HF is turned OFF.Further, while HF is controlled to be turned OFF or Low, the ratio ofions to radicals in plasma may be changed. As a result, the amount ofradicals and ions may be controlled.

As the dissociation of a gas is progressed, radicals are generated withthe progress of the dissociation. For example, C₄F₈ gas is dissociatedinto C₄F₈→C₄F₇*→ . . . →CF₂, and different radicals (e.g., C₄F₇*) areproduced according to the degree of dissociation. Examples of theparameters for progressing the dissociation include the ion energy andthe reaction time. Accordingly, by controlling the timing or time forapplying the bias power or the source power so as to control the ionenergy and/or the reaction time and promote the production of radicalssuitable for a process, it is possible to control the quality ofradicals and ions.

Further, since the ion energy decreases while the bias power is turnedOFF, the etching may not be progressed, and by-products deposited on thebottom of a hole or the like may be removed to the outside of the holeand deposited on the mask. Further, radicals may be attached to thepattern surface of the wafer W while the bias power is turned OFF. As aresult, the radicals attached to the mask protect the mask, so that themask selectivity may be improved. As a result, the etching is promotedso that the etching rate may increase, and the etching shape may beimproved.

While examples of the effects obtained when the source power isintermittently stopped have been described, the present disclosure isnot limited thereto. For example, since plasma may also be generated bythe bias power, the same effects as described above may be obtained whenthe bias power is intermittently stopped. That is, by intermittentlystopping the bias power, the quality and amount of radicals and ions maybe controlled. As a result, the etching shape may be improved whileincreasing the etching rate.

In FIGS. 13A to 13D, the source power is turned ON at the timing when LFVdc is negatively deep, in the third state. However, the presentdisclosure is not limited thereto, and the source power may be turned ONat the timing when LF Vdc is positive or at another timing. Instead ofperiodically turning the source power ON/OFF, the source power may beperiodically controlled to be High/Low.

[Modification 6]

Next, a control method according to Modification 6 of the embodimentwill be described with reference to FIG. 14. FIG. 14 is a timing chartillustrating the control method according to Modification 6 of theembodiment.

For example, in the control method according to Modification 6, the LFpulse is applied to the stage 16 as illustrated in FIG. 14. The positivevalue of the LF pulse coincides with the positive peak of the LFvoltage, and the negative value of the LF pulse coincides with thenegative peak of the LF voltage.

In this case, in the control method according to Modification 6, thefirst state and the second state of HF are alternately applied insynchronization with the phase within one cycle of the LF pulse. In thiscase as well, the amount and quality of radicals and ions may becontrolled.

Specifically, in a portion of or entire LF pulse that is positive, thesource power may be controlled to be turned OFF or Low, and in a portionof or entire LF pulse that is negative, the source power may becontrolled to be turned ON or High. Then, since the LF pulse isbinarized, and accordingly, the source power is controlled to bebinarized, the control is facilitated. While FIG. 14 controls the stateof HF illustrated in FIG. 13A in accordance with the LF pulse obtainedby changing the LF voltage illustrated in FIG. 13A into a pulse form,the present disclosure is not limited thereto. For example, the state ofHF illustrated in each of FIGS. 13B to 13D may be controlled inaccordance with the LF pulse obtained by changing the LF voltage of eachof FIGS. 13B to 13D into a pulse form.

[Modifications 7-1 to 7-4]

Next, control methods according to Modification 7-1 to 7-4 of theembodiment will be described with reference to FIGS. 15A to 15D. FIG.15A is a timing chart illustrating the control method according toModification 7-1 of the embodiment. FIG. 15B is a timing chartillustrating the control method according to Modification 7-2 of theembodiment. FIG. 15C is a timing chart illustrating the control methodaccording to Modification 7-3 of the embodiment. FIG. 15D is a timingchart illustrating the control method according to Modification 7-4 ofthe embodiment.

In the control methods according to Modifications 7-1 and 7-2illustrated in FIGS. 15A and 15B, the first state and the second stateof the source power are alternately applied in synchronization with thephase within one cycle of the reference electrical state which is the LFvoltage or the electrode potential as an example, in the first controlprocess. In Modification 7-1, the first state of the source power hastwo or more states by stages in synchronization with the timing when theelectrode potential is negative. In Modification 7-2, the first state ofthe source power smoothly has two or more states in synchronization withthe timing when the electrode potential is negative. The first state ofthe source power may be synchronized with the timing when the electrodepotential is positive.

Each of the control methods according to Modifications 7-3 and 7-4illustrated in FIGS. 15C and 15D includes the second control process, inaddition to the first control process, and in the first control process,the first state and the second state of the source power are alternatelyapplied in synchronization with the phase within one cycle of thereference electrical state which is the LF voltage as example. InModification 7-3, the first state of the source power has two or morestates by stages in synchronization with the timing when the electrodepotential is positive. In Modification 7-4, the first state of thesource power smoothly has two or more states in synchronization with thetiming when the electrode potential is positive. The first state of thesource power may be synchronized with the timing when the electrodepotential is negative.

In Modifications 7-1 to 7-4, the first state of the source power iscontrolled using a plurality of values, so that the amount and qualityof radicals and ions may be more accurately controlled. Instead of thesecond control process illustrated in FIGS. 15C and 15D, the thirdcontrol process illustrated in FIG. 13B may be performed, in addition tothe first control process illustrated in FIGS. 15C and 15D.

In the control method according to Modification 3 of the embodiment, thestrength of the electromagnet 350 is controlled according to the phase(or impedance) of the reference electrical state, the phase of LF, theelectrode potential to which the bias power is applied, LF Vdc, thereflected wave power of HF of the like. As a result, the variation ofthe impedance viewed from the matching units 46 and 88 may be reduced,so that the occurrence of IMD may be suppressed. In the control methodaccording to Modification 4 of the embodiment, the frequency of HF ischanged by the variation amount of the C component according to thevariation of the sheath thickness. That is, the frequency “f” of HF ischanged according to the variation of the C component that correspondsto the sheath thickness, based on the expression of “f” (supplyfrequency)∝1/√LC. As a result, the state where a matching issubstantially taken according to the variation of the sheath thicknessis implemented, so that the reflected wave power of HF may be reduced,and the occurrence of IMD may be suppressed. In Modification 4, afrequency variable power supply capable of changing the frequency of HFmay be used as the second radio-frequency power supply 90.

When the load impedance is constant, the frequency variable power supplyperforms a control to continuously change the frequency so as to reducethe reflected wave power of the source power as much as possible.However, in a case where the source power is controlled insynchronization with the phase within one cycle of the LF voltage orcurrent, the load of HF largely periodically varies within one cycle ofthe LF voltage or current. Accordingly, the second radio-frequency powersupply 90 needs to change the frequency in accordance with the sheaththickness that largely periodically varies according to the phase withinone cycle of LF, and more preferably, the impedance that corresponds tothe sheath thickness.

For example, FIGS. 16A and 16B are views illustrating an example of areflected wave power of HF (HF-Pr) according to the embodiment. Thereflected wave power of HF varies according to the type of gas or thephase of LF. For example, FIG. 16A illustrates an example of thereflected wave power of HF (see B) in a case where argon gas is suppliedinto the processing container 10 to apply the traveling wave power HF-Pfof HF of 500 W (see A), and an LF power of 1,000 W is applied. FIG. 16Billustrates an example of the reflected wave power of HF (see B) in acase where SF₆ gas is supplied into the processing container 10 to applythe traveling wave power of HF of 500 W (see A), and an LF power of1,000 W is applied. Here, the “C” represents the potential of the waferplaced on the stage 16. The potential of the wafer is substantiallyequal to Vpp of the LF voltage when the frequency of LF is, for example,400 kHz, and the width (amplitude) of Vpp of the HF voltage when the HFfrequency is, for example, 100 MHz is added, such that the potential ofthe wafer vibrates with both of the potentials.

From B in each of FIGS. 16A and 16B, it may be understood that theoutput form of the reflected wave power of HF with respect to the phasewithin one cycle of LF differs in the case where argon gas is suppliedand in the case where SF₆ gas is supplied.

It is not practical to change the frequency of HF output from the secondradio-frequency power supply 90 into an optimum frequency in real time,according to the difference in output form of the reflected wave powerof HF, because it takes time for the second radio-frequency power supply90 to determine the optimum frequency. For example, a normal frequencyvariable power supply is able to perform a work of measuring thereflected wave power by shifting the frequency, at 1 kHz to 10 kHz tothe maximum. Meanwhile, for example, as for LF of 400 kHz, when onecycle is divided into 10 sections, each section has 4 MHz. In order toshift the wavelength 10 times within each section, the wavelength needsto be changed to 40 MHz, and the reflection amount of HF and thevariation direction of the frequency of HF need to be determined insynchronization with the wavelength in real time. This work is notpractical since the determination may not be performed in time with theoperation frequency of the normal frequency variable power supply.

In control methods according to Modifications 8 to 11 of the embodiment,when the reflected wave power of HF is controlled in synchronizationwith the phase within one cycle of the reference electrical state (thephase of LF in the present modification), a frequency with the smallreflection of HF in each phase obtained by dividing one cycle of LF isobtained, so that the reflected wave power of HF is minimized. InModifications 8 to 11, each phase of LF indicates each phase obtained bydividing one cycle of LF into at least 10 sections. However, the numberof divisions of one cycle of LF is not limited thereto, and may be anyof 10 to 100. As the number of divisions of the phase of one cycle of LFincreases, the control accuracy is improved, so that the reflected wavepower of HF may be further reduced. The processor 100 executes thecontrol in Modifications 8 to 11.

[Modification 8]

First, the control method according to Modification 8 of the embodimentwill be described with reference to FIG. 17. FIG. 17 is a timing chartillustrating the control method according to Modification 8 of theembodiment. In the control method according to Modification 8 of theembodiment, the frequency of HF is changed in synchronization with eachphase obtained by dividing one cycle of LF into a plurality of sections.The reflected wave power of HF at that time is monitored, and from themonitoring result, the HF frequency of the second radio-frequency powersupply 90 is controlled such that the reflected wave power of HF isreduced in each phase. Then, a sequence of detecting a new frequency ofHF output from the second radio-frequency power supply 90 is performedat a predetermined time interval, for example, before or during theprocess, and the HF frequency controlled by the second radio-frequencypower supply 90 is determined based on the result.

In FIG. 17, the horizontal axis represents time, the left vertical axisrepresents the HF traveling wave power HF-Pf and the HF reflected wavepower HF-Pr, and the right vertical axis represents the wafer potential.

The first cycle of FIG. 17 represents the reflected wave power of HF(see B) when the frequency controlled by the second radio-frequencypower supply 90 is set to the initial frequency within the first onecycle of LF (the first cycle of C). The initial frequency is anarbitrary value, and is set to, for example, one basic frequency (e.g.,40 MHz).

In the second cycle of FIG. 17, the frequency controlled by the secondradio-frequency power supply 90 is changed from the initial frequency toanother frequency within the second one cycle of LF (the second cycle ofC). However, in the second cycle, the frequency is not increased ordecreased for each phase obtained from dividing the phase of one cycleof LF, but is set to be either increased or decreased to obtain a resultof a dependence of the reflection amount on the phase. While the secondcycle of FIG. 17 represents the example where the frequency (thesecond-cycle frequency) is increased, the frequency may be decreased.

As a result, it may be found that the second-cycle reflected wave powerof HF indicated by the solid line B in FIG. 17 has a portion where thereflection decreases and a portion where the reflection increases,according to the phase, as compared to the first-cycle reflected wavepower of HF indicated by the dashed line B. In FIG. 17, there are a timeperiod during which the reflected wave power of HF decreases when LF hasa positive phase, and a time period during which the reflected wavepower of HF increases when LF has a negative phase. However, thereflected wave power at this time is merely an example, and is notlimited thereto.

In the third cycle of FIG. 17, the shift direction and the shift amountof the frequency controlled by the second radio-frequency power supply90 are determined within the third one cycle of LF based on theincrease/decrease of the reflected wave power of HF in each previousphase. The third-cycle frequency illustrated in FIG. 17 is an example ofthe determined shift direction and shift amount. The reflected wavepower at this time is merely an example, and is not limited thereto.

The shift amount and the first shift direction (the arrow direction ofthe third-cycle frequency) controlled by the second radio-frequencypower supply 90 at one time may be determined based on past data. Theshift amount and the first shift direction of the frequency controlledbased on past data may be set in advance in a recipe, and a control maybe performed based on the recipe. The past data may be the reflectedwave power of HF in the previous cycle, the reflected wave power of HFin a cycle before the last cycle, or the reflected wave power of HF inthe previous cycle and before the previous cycle. For example, based onthe state of the reflected wave power in the previous cycle, the shiftdirection and the shift amount of the frequency for each phase obtainedby dividing the next one cycle of LF may be determined, such that thereflected wave power of HF in the phase is reduced. The shift directionand the shift amount may be determined based on the state of thereflected wave power in past cycle before the previous cycle, inaddition to or instead of the state of the reflected wave power in theprevious cycle.

The frequency controlled by the second radio-frequency power supply 90in the third cycle is shifted in a direction in which the reflectiondecreases. As for the control timing at that time, for example, when onecycle of LF is divided into 10 sections, the frequency is changed attime intervals that correspond to the 10 divisions of one cycle of LF.

In and after a fourth cycle, the second radio-frequency power supply 90oscillates HF at an appropriate frequency, based on the data obtained inthe third cycle or before the third cycle. The frequency controlled bythe second radio-frequency power supply 90 is repeated within anallowable frequency range until a predetermined number of times isreached, or until the reflected wave power of HF reaches a predeterminedamount, so that the frequency with the small reflected wave power of HFin each phase of one cycle of LF may be obtained.

In the control method according to Modification 8 of the embodiment, thesequence described above is performed at a designated timing. As aresult, it is possible to minimize the reflected wave power of HF thatvaries according to the phase of LF or the type of gas. An example ofthe designated timing may be a synchronization pulse cycle of timeintervals that correspond to an “n” number of divisions of one cycle ofLF (n≥10), a time designated in a recipe, a predetermined time intervalor the like.

[Modification 9]

Next, the control method according to Modification 9 of the embodimentwill be described with reference to FIG. 18. FIG. 18 is a timing chartillustrating the control method according to Modification 9 of theembodiment. In the control method according to Modification 9 of theembodiment, the second radio-frequency power supply 90 controls thefrequency of HF in synchronization with each phase within one cycle ofLF as in Modification 8, and furthermore, controls the value of thesource power output by the second radio-frequency power supply 90.

For example, as illustrated in FIG. 18, the second radio-frequency powersupply 90 controls the frequency of HF in the time period around B1 whenthe reflected wave power of HF represented by B is small (see FIG. 17),and increases the output of the HF power (the source power) representedby D as indicated by D1. Meanwhile, in the time period B2 when thereflected wave power of HF is large, the second radio-frequency powersupply 90 changes the frequency of HF, and decreases the output of thesource power as indicated by D2.

In the control method according to Modification 9 of the embodiment, thereflected wave power of HF that varies according to the phase of LF orthe type of gas may be reduced as much as possible, and when thereflected wave power of HF is small, the source power is increased sothat the decrease in plasma density may be suppressed. Further, when LFhas a positive phase, the source power may be controlled in a range of afirst source power to a second source power, and when LF has a negativephase, the source power may be controlled in a range of a third sourcepower to a fourth source power. The range of the first source power tothe second source power and the range of the third source power to thefourth source power may be different from each other, one of the rangesmay include the other, or the ranges may partially overlap with eachother.

[Modification 10]

Next, the control method according to Modification 10 of the embodimentwill be described with reference to FIG. 19. FIG. 19 is a timing chartillustrating the control method according to Modification 10 of theembodiment.

In FIG. 19, the horizontal axis represents an example of one cycle of LFand one cycle of an RF pulse. One cycle of the RF pulse may be 0.1 kHzto 100 kHz or may be longer or shorter than 0.1 kHz to 100 kHz, but isset to a time period longer than one cycle of LF. In the control methodaccording to Modification 10 of the embodiment, the secondradio-frequency power supply 90 may control the frequency of HFaccording to, for example, each phase obtained by dividing the phase ofone cycle of the RF pulse into a plurality of sections. The frequency ofHF and the source power may be controlled according to each phaseobtained by dividing the phase of one cycle of the RF pulse into aplurality of sections.

In particular, immediately after the RF pulse is turned ON or OFF, thevariation of the plasma density Ne and the variation of the electrodepotential are large, and thus, the reflected wave power of HF tends tovary differently from the reflected wave power when the RF pulse isnormal. Thus, as illustrated in FIG. 19, it takes time for LF to rise,and the sheath is thin (i.e., the capacitance of the sheath is large),immediately after the timing V when the RF pulse is turned ON in eachcycle. Accordingly, the second radio-frequency power supply 90 controlsthe frequency of HF to be high immediately after the timing V when theRF pulse is turned ON (see E).

In FIG. 19, the bias power is turned OFF during the latter half timeperiod of the RF pulse (see C1). During the time period, the reflectedwave power of HF is constant near 0 as represented by B3. That is, atthe timing when the bias power is turned OFF and the source power isturned ON, the impedance of the sheath is always constant because thebias power is turned OFF. Thus, the reflected wave power of HF becomesconstant. Accordingly, while the bias power is turned OFF, the frequencyis determined such that the reflected wave power of HF is minimized, andthe second radio-frequency power supply 90 outputs the source power ofthe determined frequency.

The source power may be controlled to be turned OFF or turned ON whilethe bias power is turned OFF. For example, as represented by C1 of FIG.19, while the bias power is turned OFF, the frequency of HF may be setto the frequency of E1, and the source power may be controlled to beHigh (or turned ON) in the former half, and the frequency of HF may bechanged to the frequency of E2, and the source power may be controlledto be Low (or turned OFF) in the latter half. The cycles forintermittently stopping the source power and the bias power may be thesame, or the source power may be shifted behind or in front of the biaspower. The time for stopping the source power may be longer or shorterthan the time for stopping the bias power.

The control methods according to Modifications 8 to 10 are performed bythe processor 100 of FIG. 2A, and a control signal for controlling theHF frequency and the HF power is sent to the second radio-frequencypower supply 90 via the signal generation circuit 102. The secondradio-frequency power supply 90 changes the frequency or power of HF tobe output according to the control signal.

[Modification 11]

Next, the control method according to Modification 11 of the embodimentwill be described with reference to FIG. 20. FIG. 20 is a timing chartillustrating the control method according to Modification 11 of theembodiment.

As described in Modification 10, it takes time for LF to rise, and thesheath is thin (i.e., the sheath has a large capacitance), immediatelyafter the RF pulse is turned ON. Thus, during the rise of the RF pulse,the plasma density Ne largely varies, and the variation of the impedanceis relatively significant.

Thus, in the control method according to Modification 11, the secondradio-frequency power supply 90 oscillates a composite wave of aplurality of frequencies at the rising timing of the RF pulse in onecycle of LF, that is, at E3 of FIG. 20. The reflection detector 111 ofFIG. 2A detects the reflected wave power of HF for each of the pluralityof frequencies. The detected reflected wave power of HF for eachfrequency is sent to the processor 100.

For example, it is assumed that the second radio-frequency power supply90 may amplify the frequency from 35 MHz to 45 MHz, and oscillates acomposite wave of five frequencies of 41 MHz, 42 MHz, 43 MHz, 44 MHz,and 45 MHz. The reflection detector 111 detects the reflected wave powerfor the source power of each of the five frequencies, and sends thedetected reflected wave power to the processor 100. The processor 100selects the frequency with the smallest reflected wave power from thesent reflected wave powers.

For example, when the frequency with the smallest reflected wave poweris 41 MHz, the frequency of 41 MHz may be determined to be the frequencyof HF output from the second radio-frequency power supply 90, at therising timing of the RF pulse in the next one cycle of LF. In E4 of FIG.20, the source power of each of the five frequencies 39 MHz, 40 MHz, 41MHz, 42 MHz, and 43 MHz may be output centering on the frequency of 41MHz with the smallest reflected wave power in the previous cycle.

As a result, the frequency of HF output from the second radio-frequencypower supply 90 may reach the target frequency with the smallestreflected wave power of HF at the highest speed. As a result, the sourcepower output from the second radio-frequency power supply 90 may be morequickly brought to the frequency with the small reflected wave power ofHF, so that plasma may be more quickly ignited.

When the processor 100 performs the control method according toModification 11, a control signal is sent to the second radio-frequencypower supply 90 via the signal generation circuit 102, for controllingthe frequency of HF based on the reflected wave power of HF thatcorresponds to each of the plurality of frequencies detected by thereflection detector 111 of FIG. 2A.

However, the present disclosure is not limited thereto, and the secondradio-frequency power supply 90 may have the function of the processor100. In this case, the reflected wave power of HF that corresponds toeach of the plurality of frequencies detected by the reflection detector111 is sent from the reflection detector 111 directly to the secondradio-frequency power supply 90.

In this case, the second radio-frequency power supply 90 may beimplemented as a variable frequency power supply provided with acontroller that has the function of the processor 100. That is, in thiscase, the controller included in the variable frequency power supplyacquires the reflected wave power of HF that corresponds to each of theplurality of frequencies of HF from the reflection detector 111, andselects the frequency with the smallest reflected wave power based onthe acquired reflected wave powers of HF. Then, the controllerdetermines to cause the source power of the selected frequency to beoutput from the variable frequency power supply. The variable frequencypower supply changes the frequency of the source power to the determinedfrequency, and outputs the frequency with a predetermined power. As aresult, the second radio-frequency power supply 90 may control thefrequency of HF and the source power to be output, without using theprocessor 100 and the signal generation circuit 102. As a result, thesecond radio-frequency power supply 90 may perform the control methodsof Modifications 8 to 11 without using the processor 100.

In the control method of Modification 11, a radio frequency in which aplurality of frequencies are combined with each other is used. However,the radio frequency in which a plurality of frequencies are combinedwith each other may be used in the control methods of Modifications 8 to10. Further, a sequence may be provided for freely changing oroptimizing the mixing ratio of the radio frequencies of the plurality offrequencies in the control methods of Modifications 8 to 10.

The control methods of Modifications 8 to 11 described above relate to acontrol method of a plasma processing apparatus having a first electrodethat places a workpiece thereon, and includes supplying a bias power tothe first electrode, and supplying a source power having a frequencyhigher than that of the bias power into a plasma processing space. Thesource power has a first state and a second state. The control methodincludes a first control process of alternately applying the first stateand the second state in synchronization with a signal synchronized witha cycle of a radio frequency of the bias power, or a phase within onecycle of a reference electrical state that represents any one of avoltage, current, and electromagnetic field measured in a power feedingsystem of the bias power.

[Modification 12]

In Modification 12, the first state of the HF voltage takes a pulse-typevoltage value in which two or more voltage values are repeated. In theexample of FIG. 21, the first state of the HF voltage repeats a positivevoltage value and a voltage value 0. However, the present disclosure isnot limited thereto, and two or more voltage values, for example, threevoltage values may be repeated.

[Modification 13]

The bias power may be a power of a sine waveform, a pulse waveform or atailored waveform. That is, the bias voltage or current may be a sinewaveform, an LF pulse waveform, or a tailored waveform illustrated inFIG. 22. In the tailored waveform, the bias power may be modulated whenthe HF illustrated in FIG. 22 is in the second state, or may bemodulated when the HF is in the first state.

Similarly, when the first state of HF takes two or more voltage values,the waveform of HF may be the tailored waveform illustrated in FIG. 22,in addition to the waveforms illustrated in FIGS. 15A to 15D and FIG.21.

The plasma processing apparatus and the control method according to theforegoing embodiments are examples in all aspects, and should not beconstrued as being limited to the examples. The embodiments describedabove may be modified and improved in various ways without departingfrom the scope and spirit of the accompanying claims. The descriptionsin the plurality of embodiments described above may have otherconfigurations within the scope that does not cause any inconsistency.Further, the descriptions in the plurality of embodiments describedabove may be combined with each other within the scope that does notcause any inconsistency.

The plasma processing apparatus according to the present disclosure maybe applied to any of a capacitively coupled plasma (CCP) type, aninductively coupled plasma (ICP) type, a radial line slot antenna (RLSA)type, an electron cyclotron resonance plasma (ECR) type, and a heliconwave plasma (HWP) type.

For example, an aspect of the present disclosure provides a controlmethod of a plasma processing apparatus including a first electrode thatplaces a workpiece thereon, and a second electrode that faces the firstelectrode. The control method includes supplying a bias power to thefirst electrode, and supplying a source power having a frequency higherthan that of the bias power into the plasma processing space. The sourcepower has a first state and a second state. The control method includesa first control process of alternately applying the first state and thesecond state in synchronization with a phase within one cycle of areference electrical state.

Another aspect of the present disclosure provides a control method of aplasma processing apparatus including a first electrode that places aworkpiece thereon. The control method includes supplying a bias power tothe first electrode, and supplying a source power having a frequencyhigher than that of the bias power into the plasma processing space. Thesource power has a first state and a second state. The control methodincludes a first control process of alternately applying the first stateand the second state in synchronization with a phase within one cycle ofa reference electrical state.

The supplying the source power having a frequency higher than that ofthe bias power into the plasma processing space may be performed in themanner that a plasma generation source for generating plasma supplies asource power of a microwave source, a radio-frequency power supply orthe like into the plasma processing space.

In the descriptions herein, the wafer W is described as an example ofthe workpiece. However, the substrate is not limited thereto, and may bemay be any of various substrates used for a liquid crystal display (LCD)and a flat panel display (FPD), a CD substrate, a print substrate andothers.

According to an aspect of the present disclosure, the amount and qualityof radicals and ions may be controlled.

(1) A control method of a plasma processing apparatus including a firstelectrode that places a workpiece thereon, the control method includes:supplying a bias power to the first electrode; and supplying a sourcepower having a frequency higher than that of the bias power into aplasma processing space. The source power has a first state and a secondstate, and the control method further comprises a first control processof alternately applying the first state and the second state of thesource power in synchronization with a signal synchronized with a cycleof a radio frequency of the bias power, or a phase within one cycle of areference electrical state that represents any one of a voltage,current, and electromagnetic field measured in a power feeding system ofthe bias power.

(2) In the control method according to (1), the plasma processingapparatus includes a second electrode that faces the first electrode,and the supplying the source power into the plasma processing spaceapplies the source power to the first electrode or the second electrode.

(3) In the control method according to (1), a time period of the firststate includes a timing when the phase of the reference electrical statebecomes a positive peak.

(4) In the control method according to (1), a time period of the firststate includes a timing when the phase of the reference electrical statebecomes a negative peak.

(5) In the control method according to (1), the first state is largerthan the second state.

(6) The control method according to (1) further includes a secondcontrol process of intermittently stopping the source power in anindependent cycle from the cycle of the reference electrical state.

(7) The control method according to (1) further includes a third controlprocess of intermittently stopping the bias power in an independentcycle from a cycle of a voltage or current of HF.

(8) The control method according to (1) further includes: a secondcontrol process of intermittently stopping the source power in anindependent cycle from the cycle of the reference electrical state, anda third control process of intermittently stopping the bias power in anindependent cycle from a cycle of a voltage or current of HF. The secondcontrol process and the third control process are synchronized with eachother.

(9) In the control method according to (1), a pulsed power correspondingto a peak of a phase of the reference electrical state is applied.

(10) In the control method according (1), the first state has two ormore states.

(11) In the control method according to (1), a value of the source powerof the second state is 0.

(12) In the control method according to (1), the reference electricalstate is a state of a signal synchronized with a cycle of a radiofrequency of the bias power, or a voltage, current or electromagneticfield measured in any one of members from the first electrode to theinside of the matching unit connected via the power feeding rod of thebias power in the power feeding system of the bias power.

(13) A plasma processing apparatus includes: a first electrodeconfigured to place a workpiece thereon; a plasma generation sourceconfigured to generate plasma; a bias power supply configured to supplya bias power to the first electrode; a source power supply configured tosupply a source power having a frequency higher than that of the biaspower to the plasma generation source; and a controller configured tocontrol the bias power supply and the source power supply. The sourcepower has a first state and a second state, and the controller performsa control to alternately apply the first state and the second state ofthe source power in synchronization with a signal synchronized with acycle of a radio frequency of the bias power, or a phase within onecycle of a reference electrical state that represents any one of avoltage, current, and electromagnetic field measured in a power feedingsystem of the bias power.

(14) A plasma processing apparatus includes: a first electrodeconfigured to place a workpiece thereon; a second electrode that facesthe first electrode; a bias power supply configured to supply a biaspower to the first electrode; a source power supply configured to supplya source power having a frequency higher than that of the bias power tothe first electrode or the second electrode; and a controller configuredto control the bias power supply and the source power supply. The sourcepower has a first state and a second state, and the controller performsa control to alternately apply the first state and the second state ofthe source power in synchronization with a signal synchronized with acycle of a radio frequency of the bias power, or a phase within onecycle of a reference electrical state that represents any one of avoltage, current, and electromagnetic field measured in a power feedingsystem of the bias power.

(15) In the plasma processing apparatus according to (13), thecontroller creates a synchronization signal that is synchronized withthe phase of the reference electrical state, generates a source powersupply control signal for outputting the source power from thesynchronization signal, and transmits the generated control signal tothe source power supply.

(16) In the plasma processing apparatus according to (13), an additionalcircuit including at least one element of a coil, a variable capacitor,and a diode is attached to a supply line of the bias power or the sourcepower, or the first electrode.

(17) In the plasma processing apparatus according to (13), an impedancevariation circuit of which impedance is changeable is attached to apower feeding line of the bias power or the source power, or the firstelectrode, and the controller changes the impedance of the impedancevariation circuit.

(18) The plasma processing apparatus according to (13) further includes:a magnetic field generator configured to apply a magnetic field. Thecontroller controls an intensity of the magnetic field generated by themagnetic field generator, according to the bias power, the phase of thereference electrical state, the potential of the first electrode towhich the bias power is applied, a self-bias, or a measured reflectedwave power of the source power.

(19) In the plasma processing apparatus according to (13), the sourcepower supply is a frequency variable power supply, and the controllerchanges the frequency of the source power output from the source powersupply according to the phase of the reference electrical state.

(20) A control method of a plasma processing apparatus including a firstelectrode that places a workpiece thereon, the control method includes:supplying a bias power to the first electrode; and supplying a sourcepower having a frequency higher than that of the bias power into aplasma processing space, wherein the source power has a first state anda second state, and the control method further comprises a first controlprocess of controlling the first state and the second state of thesource power with two or more frequencies according to each phaseobtained by dividing a signal synchronized with a cycle of a radiofrequency of the bias power, or a phase within one cycle of a referenceelectrical state that represents any one of a voltage, current, andelectromagnetic field measured in a power feeding system of the biaspower.

DESCRIPTION OF SYMBOLS

 1: plasma processing apparatus  10: processing container  16: stage(lower electrode)  34: upper electrode  47: power feeding rod  46:matching unit  48: first radio-frequency power  50: variable DC powersupply supply  66: processing gas source  84: exhaust device  88:matching unit  89: power feeding rod  90: second radio-frequency power 91: GND block supply 100: processor 102: signal generation circuit 105,directional coupler 111: reflection detector 108: 112: oscilloscope 200:controller 250: additional circuit 300: impedance variation circuit 350:electromagnet

What is claimed is:
 1. A plasma processing apparatus comprising: anelectrode; a low frequency (LF) radio frequency (RF) power supplyconfigured to generate LF power at a first radio frequency (RF)frequency, a waveform of the first RF frequency having a cycle, a firsthalf-cycle of the waveform being separated from a second half cycle ofthe waveform at a zero-crossing; a high frequency (HF) RF power supplyconfigured to generate HF power at a changeable RF frequency that ishigher in frequency than the first RF frequency, the LF power and the HFpower being applied to the electrode; and a controller configured tocontrol the HF RF power supply to provide the HF power at a first HFfrequency during the first half-cycle of the waveform of first RFfrequency, and provide the HF power at a second HF frequency during thesecond half-cycle of the waveform of the first RF frequency.
 2. Theplasma processing apparatus according to claim 1, wherein thezero-crossing being at a mid-point of the cycle of the waveform of thefirst RF frequency, the waveform having an initial zero-crossing at aninitial portion of the cycle of the waveform, and the waveform having anend zero-crossing at an end of the cycle of the waveform.
 3. The plasmaprocessing apparatus according to claim 1, further comprising: impedancematching circuitry disposed in a power supply path between the LF RFpower supply and the electrode and between the HF RF power supply andthe electrode.
 4. The plasma processing apparatus according to claim 3,wherein the controller is configured to control the HF RF power supplyto change the HF power from the first HF frequency during the firsthalf-cycle to the second HF frequency during the second half-cycle ofthe waveform so as to assist the impedance matching circuitry inreducing a reflection of RF power supplied to the electrode.
 5. Theplasma processing apparatus according to claim 1, wherein a frequency ofthe waveform of the first RF frequency is in an inclusive range of 200kHz through 13.56 MHz.
 6. The plasma processing apparatus according toclaim 5, wherein the frequency of the waveform of the first RF frequencyis in an inclusive range of 200 kHz and 400kHz.
 7. The plasma processingapparatus according to claim 1, wherein a minimum frequency of thechangeable RF frequency is at least 13.56 MHz.
 8. The plasma processingapparatus according to claim 3, further comprising: a voltage sensorthat detects an output voltage of the impedance matching circuitry. 9.The plasma processing apparatus according to claim 1, wherein the LF RFpower supply generates the LF power at a higher level than the HF powergenerated by the HF RF power supply.
 10. The plasma processing apparatusaccording to claim 1, wherein the controller is further configured toprogressively change the second HF frequency during the secondhalf-cycle.
 11. The plasma processing apparatus according to claim 10,wherein the controller is further configured to maintain the first HFfrequency constant during the first half-cycle but progressively changethe second HF frequency during the second half-cycle.
 12. The plasmaprocessing apparatus according to claim 1, wherein the controller isfurther configured to progressively increase the second HF frequencyduring a first portion of the second half-cycle and decrease the secondHF frequency during a second portion of the second half-cycle, thesecond portion of the second half-cycle being later in time than thefirst portion of the second half-cycle.
 13. A controller in a plasmaprocessing apparatus comprising: circuitry configured to control a lowfrequency (LF) radio frequency (RF) power supply to generate LF power ata first radio frequency (RF) frequency, a waveform of the first RFfrequency having a cycle, a first half-cycle of the waveform beingseparated from a second half cycle of the waveform at a zero-crossing;control a high frequency (HF) RF power supply to generate HF power at achangeable RF frequency that is higher in frequency than the first RFfrequency, the LF power and the HF power being applied to an electrodein the plasma processing apparatus; and control the HF RF power supplyto provide the HF power at a first HF frequency during the firsthalf-cycle of the waveform of first RF frequency, and provide the HFpower at a second HF frequency during the second half-cycle of thewaveform of the first RF frequency.
 14. The controller according toclaim 13, wherein the zero-crossing being at a mid-point of the cycle ofthe waveform of the first RF frequency, the waveform having an initialzero-crossing at an initial portion of the cycle of the waveform, andthe waveform having an end zero-crossing at an end of the cycle of thewaveform.
 15. The controller according to claim 13, wherein: thecircuitry is configured to control the HF RF power supply to change theHF power from the first HF frequency during the first half-cycle to thesecond HF frequency during the second half-cycle of the waveform so asto assist an impedance matching circuitry in reducing a reflection of RFpower supplied to the electrode.
 16. The controller according to claim13, wherein the circuitry is configured to control a frequency of thewaveform of the first RF frequency to be in an inclusive range of 200kHz through 13.56 MHz.
 17. The controller according to claim 16, whereinthe circuitry is configured to control the frequency of the waveform ofthe first RF frequency to be in an inclusive range of 200 kHz and 400kHz.
 18. The controller according to claim 13, wherein the circuitry isconfigured to control a minimum frequency of the changeable RF frequencyto be at least 13.56 MHz.
 19. The controller according to claim 13,wherein the circuitry is configured to control the LF RF power supply togenerate the LF power at a higher level than the HF power generated bythe HF RF power supply.
 20. The controller according to claim 13,wherein the circuitry is further configured to progressively change thesecond HF frequency during the second half-cycle.
 21. The controlleraccording to claim 20, wherein the circuitry is further configured tomaintain the first HF frequency constant during the first half-cycle butprogressively change the second HF frequency during the secondhalf-cycle.
 22. The controller according to claim 13, wherein thecircuitry is further configured to progressively increase the second HFfrequency during a first portion of the second half-cycle and decreasethe second HF frequency during a second portion of the secondhalf-cycle, the second portion of the second half-cycle being later intime than the first portion of the second half-cycle.
 23. A method forcontrolling a plasma processing apparatus comprising: generating, with alow frequency (LF) radio frequency (RF) power supply, LF power at afirst radio frequency (RF) frequency, a waveform of the first RFfrequency having a cycle, a first half-cycle of the waveform beingseparated from a second half cycle of the waveform at a zero-crossing;generating, with a high frequency (HF) RF power supply, HF power at achangeable RF frequency that is higher in frequency than the first RFfrequency, the LF power and the HF power being applied to an electrodein the plasma processing apparatus; and controlling the HF RF powersupply to provide the HF power at a first HF frequency during the firsthalf-cycle of the waveform of first RF frequency, and provide the HFpower at a second HF frequency during the second half-cycle of thewaveform of the first RF frequency.
 24. The method according to claim23, wherein the controlling includes controlling a zero-crossing to beat a mid-point of the cycle of the waveform of the first RF frequency,the waveform to have an initial zero-crossing at an initial portion ofthe cycle of the waveform, and the waveform to have an end zero-crossingat an end of the cycle of the waveform.
 25. The method according toclaim 23, wherein: the controlling includes controlling the HF RF powersupply to change the HF power from the first HF frequency during thefirst half-cycle to the second HF frequency during the second half-cycleof the waveform so as to assist an impedance matching circuitry inreducing a reflection of RF power supplied to the electrode.
 26. Themethod according to claim 23, wherein the controlling includescontrolling a frequency of the waveform of the first RF frequency to bein an inclusive range of 200 kHz through 13.56 MHz.
 27. The methodaccording to claim 26, wherein the controlling includes controlling thefrequency of the waveform of the first RF frequency to be in aninclusive range of 200 kHz and 400 kHz.
 28. The method according toclaim 23, wherein the controlling includes controlling a minimumfrequency of the changeable RF frequency to be at least 13.56 MHz. 29.The method according to claim 23, wherein the controlling includescontrolling the LF RF power supply to generate the LF power at a higherlevel than the HF power generated by the HF RF power supply.
 30. Themethod according to claim 23, wherein the controlling includesprogressively changing the second HF frequency during the secondhalf-cycle.
 31. The method according to claim 30, wherein thecontrolling includes maintaining the first HF frequency constant duringthe first half-cycle but progressively change the second HF frequencyduring the second half-cycle.
 32. The method according to claim 23,wherein the controlling includes progressively increasing the second HFfrequency during a first portion of the second half-cycle and decreasingthe second HF frequency during a second portion of the secondhalf-cycle, the second portion of the second half-cycle being later intime than the first portion of the second half-cycle.
 33. Anon-transitory computer readable storage device having stored thereincomputer readable instructions that when executed by controllercircuitry cause the controller circuitry to perform a control process ina plasma processing apparatus comprising: generating, with a lowfrequency (LF) radio frequency (RF) power supply, LF power at a firstradio frequency (RF) frequency, a waveform of the first RF frequencyhaving a cycle, a first half-cycle of the waveform being separated froma second half cycle of the waveform at a zero-crossing; generating, witha high frequency (HF) RF power supply, HF power at a changeable RFfrequency that is higher in frequency than the first RF frequency, theLF power and the HF power being applied to an electrode in the plasmaprocessing apparatus; and controlling the HF RF power supply to providethe HF power at a first HF frequency during the first half-cycle of thewaveform of first RF frequency, and provide the HF power at a second HFfrequency during the second half-cycle of the waveform of the first RFfrequency.